JPS6180852A - 不揮発性ダイナミツク・メモリ・セル - Google Patents

不揮発性ダイナミツク・メモリ・セル

Info

Publication number
JPS6180852A
JPS6180852A JP60126408A JP12640885A JPS6180852A JP S6180852 A JPS6180852 A JP S6180852A JP 60126408 A JP60126408 A JP 60126408A JP 12640885 A JP12640885 A JP 12640885A JP S6180852 A JPS6180852 A JP S6180852A
Authority
JP
Japan
Prior art keywords
floating gate
charge
voltage
gate
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60126408A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0574948B2 (en]
Inventor
ブルース・アラン・カウフマン
チユング・ホン・ラム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6180852A publication Critical patent/JPS6180852A/ja
Publication of JPH0574948B2 publication Critical patent/JPH0574948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/682—Floating-gate IGFETs having only two programming levels programmed by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
JP60126408A 1984-09-27 1985-06-12 不揮発性ダイナミツク・メモリ・セル Granted JPS6180852A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/655,134 US4729115A (en) 1984-09-27 1984-09-27 Non-volatile dynamic random access memory cell
US655134 1996-05-30

Publications (2)

Publication Number Publication Date
JPS6180852A true JPS6180852A (ja) 1986-04-24
JPH0574948B2 JPH0574948B2 (en]) 1993-10-19

Family

ID=24627669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60126408A Granted JPS6180852A (ja) 1984-09-27 1985-06-12 不揮発性ダイナミツク・メモリ・セル

Country Status (4)

Country Link
US (1) US4729115A (en])
EP (1) EP0177816B1 (en])
JP (1) JPS6180852A (en])
DE (1) DE3580962D1 (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152673A (ja) * 1987-12-09 1989-06-15 Toshiba Corp 半導体装置の製造方法
JPH01218061A (ja) * 1988-02-26 1989-08-31 Hitachi Ltd 半導体集積回路装置の製造方法
US5108253A (en) * 1989-02-16 1992-04-28 Kubota, Ltd. Hydraulic piping structure for a backhoe

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2645585B2 (ja) * 1989-03-10 1997-08-25 工業技術院長 半導体不揮発性メモリ及びその書き込み方法
JPH0772996B2 (ja) * 1987-01-31 1995-08-02 株式会社東芝 不揮発性半導体メモリ
JP2529885B2 (ja) * 1989-03-10 1996-09-04 工業技術院長 半導体メモリ及びその動作方法
US5196914A (en) * 1989-03-15 1993-03-23 Sgs-Thomson Microelectronics S.R.L. Table cloth matrix of EPROM memory cells with an asymmetrical fin
US4954990A (en) * 1989-05-30 1990-09-04 Cypress Semiconductor Corp. Programming voltage control circuit for EPROMS
US5572054A (en) * 1990-01-22 1996-11-05 Silicon Storage Technology, Inc. Method of operating a single transistor non-volatile electrically alterable semiconductor memory device
US5202850A (en) * 1990-01-22 1993-04-13 Silicon Storage Technology, Inc. Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate
KR100257661B1 (ko) * 1991-01-17 2000-06-01 윌리엄 비. 켐플러 불휘발성 메모리 셀 구조물 및 그 형성 방법
EP0579779B1 (en) * 1991-04-09 1998-07-08 Silicon Storage Technology, Inc. A single transistor non-volatile electrically alterable semiconductor memory device
US5291439A (en) * 1991-09-12 1994-03-01 International Business Machines Corporation Semiconductor memory cell and memory array with inversion layer
US5399516A (en) * 1992-03-12 1995-03-21 International Business Machines Corporation Method of making shadow RAM cell having a shallow trench EEPROM
US5467305A (en) * 1992-03-12 1995-11-14 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
DE69832019T2 (de) * 1997-09-09 2006-07-20 Interuniversitair Micro-Electronica Centrum Vzw Verfahren zur Löschung und Programmierung eines Speichers in Kleinspannungs-Anwendungen und Anwendungen mit geringer Leistung
US6097056A (en) 1998-04-28 2000-08-01 International Business Machines Corporation Field effect transistor having a floating gate
JP2007193867A (ja) * 2006-01-17 2007-08-02 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその書き換え方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105888A (en) * 1980-12-22 1982-07-01 Ibm Memory-cell
JPS58142565A (ja) * 1982-02-19 1983-08-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体メモリ装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906296A (en) * 1969-08-11 1975-09-16 Nasa Stored charge transistor
US3825946A (en) * 1971-01-15 1974-07-23 Intel Corp Electrically alterable floating gate device and method for altering same
US4119995A (en) * 1976-08-23 1978-10-10 Intel Corporation Electrically programmable and electrically erasable MOS memory cell
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
US4300212A (en) * 1979-01-24 1981-11-10 Xicor, Inc. Nonvolatile static random access memory devices
US4334292A (en) * 1980-05-27 1982-06-08 International Business Machines Corp. Low voltage electrically erasable programmable read only memory
US4336603A (en) * 1980-06-18 1982-06-22 International Business Machines Corp. Three terminal electrically erasable programmable read only memory
US4399522A (en) * 1980-09-30 1983-08-16 International Business Machines Corporation Non-volatile static RAM cell with enhanced conduction insulators
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
US4380057A (en) * 1980-10-27 1983-04-12 International Business Machines Corporation Electrically alterable double dense memory
US4375085A (en) * 1981-01-02 1983-02-22 International Business Machines Corporation Dense electrically alterable read only memory
US4432072A (en) * 1981-12-31 1984-02-14 International Business Machines Corporation Non-volatile dynamic RAM cell
US4446535A (en) * 1981-12-31 1984-05-01 International Business Machines Corporation Non-inverting non-volatile dynamic RAM cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105888A (en) * 1980-12-22 1982-07-01 Ibm Memory-cell
JPS58142565A (ja) * 1982-02-19 1983-08-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体メモリ装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152673A (ja) * 1987-12-09 1989-06-15 Toshiba Corp 半導体装置の製造方法
JPH01218061A (ja) * 1988-02-26 1989-08-31 Hitachi Ltd 半導体集積回路装置の製造方法
US5108253A (en) * 1989-02-16 1992-04-28 Kubota, Ltd. Hydraulic piping structure for a backhoe

Also Published As

Publication number Publication date
EP0177816B1 (en) 1990-12-19
EP0177816A3 (en) 1986-12-30
EP0177816A2 (en) 1986-04-16
DE3580962D1 (de) 1991-01-31
JPH0574948B2 (en]) 1993-10-19
US4729115A (en) 1988-03-01

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